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| Preliminary Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse) Note3 IAP Pch Note 2 ch-c Tch Tstg Note1 Value 500 30 5 20 5 41.7 3.0 150 -55 to +150 Unit V V A A A W C/W C C REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Page 1 of 5 RJK5030DPD Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V (BR) DSS IDSS IGSS VGS (off) RDS (on) Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 500 -- -- 3.5 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.3 550 60 10 15 20 90 30 0.9 250 Max -- 10 0.1 4.5 1.6 -- -- -- -- -- -- -- 1.5 -- Unit V A A V pF pF pF ns ns ns ns V ns Test Conditions ID = 1 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 25 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 2 A, VGS = 10 V Note 4 VDS = 25 V VGS = 0 f = 1 MHz VDD = 200 V ID = 2 A VGS = 10 V Rg = 25 IF = 5 A, VGS = 0 Note 4 IF = 5 A, VGS = 0 VDD = 250 V diF/dt = 100 A/s Note: 4. Pulse test REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Page 2 of 5 RJK5030DPD Preliminary Main Characteristics Maximum Safe Operation Area 100 10 s Typical Output Characteristics 10 Ta = 25C Pulse Test 8V 7V 10 V 20 V 6.7 V 6 6.4 V 6.1 V 5.8 V 2 0 0 4 8 12 16 20 5.4 V VGS = 5 V ID (A) Drain Current 1000 ID (A) 10 PW 8 = 10 0 1 s Drain Current 0.1 0.01 Operation in this area is limited by RDS(on) Tc = 25C 1 shot 1 10 100 4 0.001 0.1 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test Tc = -25C Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) () 10 10 ID (A) Drain Current 8 6 25C 4 75C 2 1 VGS = 10 V Ta = 25C Pulse Test 0.1 1 10 100 0 0 2 4 6 8 10 12 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) () Static Drain to Source on State Resistance vs. Temperature (Typical) 5 VGS = 10 V Ta = 25C Pulse Test ID = 5 A 3 2A 1A 1 1000 Body-Drain Diode Reverse Recovery Time (Typical) Reverse Recovery Time trr (ns) 4 100 2 0 -25 di / dt = 100 A / s VGS = 0, Ta = 25C 10 1 10 100 0 25 50 75 100 125 150 Case Temperature Tc (C) Reverse Drain Current IDR (A) REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Page 3 of 5 RJK5030DPD Typical Capacitance vs. Drain to Source Voltage VDS (V) 1000 Ciss Preliminary Dynamic Input Characteristics (Typical) ID = 5 A Ta = 25C Capacitance C (pF) 600 VDS 12 VDD = 100 V 200 V 8 400 V Drain to Source Voltage Coss 10 Crss VGS = 0 f = 1 MHz Tc = 25C 1 0 50 100 150 200 250 400 200 VDD = 400 V 200 V 100 V 4 8 12 16 4 0 0 20 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage (Typical) 20 5 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) ID = 10 mA 4 IDR (A) 16 Reverse Drain Current Gate to Source Cutoff Voltage VGS(off) (V) VGS = 0 Ta = 25C Pulse Test 12 3 1 mA 0.1 mA 8 4 2 1 VDS = 10 V 0 -25 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (C) Thermal Impedance vs. Pulse Width Thermal Impedance ch - c (C/W) 100 Tc = 25C Single pulse 10 1 0.1 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (s) REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Page 4 of 5 Gate to Source Voltage 100 VGS (V) 800 VGS 16 RJK5030DPD Preliminary Package Dimensions Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZG-A Previous Code TMP3 MASS[Typ.] 0.32g Unit: mm 1 0.2 6.6 5.3 0.2 2.3 0.5 0.2 6.1 0.2 10.4Max 0.1 0.1 1Max 2.5Min 0.76 0.2 0.76 0.5 0.2 2.3 0.2 2.3 Ordering Information Part No. RJK5030DPD-00 Quantity 3000 pcs Taping Shipping Container REJ03G1913-0100 Rev.1.00 Apr 12, 2010 1 1.4 0.2 Page 5 of 5 Notice 1. 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